transistor (npn) features z high voltage and high current z excellent h fe linearity z high h fe z low noise z complementary to 2sa1586 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 150 ma p c collector power dissipation 100 mw t j junction temperature 150 t stg junction and storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =100 a,i c =0 5 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =6v,i c =2ma 70 700 collector-emitter saturation voltage v ce(sat) i c =100ma,i b =10ma 0.25 v transition frequency f t v ce =10v,i c =1ma, 80 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 3.5 pf noise figure nf v ce =6v,i c =0.1ma, f=1kh z ,rg=10k ? 10 db classification of h fe rank o y gr bl range 70-140 120-240 200-400 350-700 marking lo ly lg ll sot-323 1. base 2. emitter 3. collector 2SC4116 1 www.htsemi.com semiconductor jinyu
2SC4116 2 www.htsemi.com semiconductor jinyu
2SC4116 3 www.htsemi.com semiconductor jinyu
|
